Part Number Hot Search : 
2SD1709 USB0403 BAV16 A2223 SA51A P120XX M170EG01 2SC5324
Product Description
Full Text Search
 

To Download BUX84F Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUX84F BUX85F
DESCRIPTION With TO-220Fa package High voltage ,high speed APPLICATIONS Converters Inverters Switching regulators Motor controls systems
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION
Absolut maximum ratings (Ta=25ae )
SYMBOL VCBO

PARAMETER
Collector-base voltage
VCEO VEBO IC ICM IB IBM Ptot Tj Tstg
INC
Collector-emitter voltage
E SEM ANG H
BUX84F BUX85F BUX84F Open base BUX85F
Open emitter
OND IC
CONDITIONS
TOR UC
VALUE 800 1000 400 450 10 2 3 0.75 1
UNIT V
V V A A A A W ae ae
Emitter-base voltage
Open collector
Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25ae
18 150 -65~150
THERMAL CHARACTERISTICS
SYMBOL Rth j-a PARAMETER Thermal resistance junction to ambient MAX 55 UNIT K/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER BUX84F VCEO(SUS) Collector-emitter sustaining voltage BUX85F VCEsat-1 VCEsat-2 VBEsat Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage BUX84F ICES Collector cut-off current BUX85F IEBO hFE-1 hFE-2 fT Emitter cut-off current IC=0.3A ;IB=0.03A IC=1A ;IB=0.2A IC=1A ;IB=0.2A VCES=800V; VBE=0 Tj=125ae VCES=1000V; VBE=0 Tj=125ae VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=100mA ; IB=0;L=25mH CONDITIONS
BUX84F BUX85F
SYMBOL
MIN 400
TYP.
MAX
UNIT
V 450 0.8 1 1.1 0.2 1.5 mA 0.2 1.5 V V V
IN
DC current gain DC current gain

Transition frequency
Switching times ton ts tf
ANG CH
MIC E SE
IC=0.5A ; VCE=5V
DUC ON
20 15 20
TOR
1.0 100
mA
IC=0.2A ;VCE=10V;f=1.0MHz
MHz
Turn-on time Storage time Fall time IC=1A ;VCC=250V IB1=0.2A;IB2=-0.4A
0.2 2 0.4
0.5 3.5 |I |I
|I
s s s
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BUX84F BUX85F

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 Outline dimensions (unindicated tolerance: A
0.10mm)
3


▲Up To Search▲   

 
Price & Availability of BUX84F

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X